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Arrays of Si nanowires on Si wafer
Array of ~3 um long Si nanowires on 10 mm x 10 mm Si substrates
Array of 1 um long Si nanowires on 10 mm x 10 mm Si substrates
Array of 0.5 um and 3 um long Si nanowires on 10 mm x 10 mm Si substrates
Array of 0.5 um long Si nanowires on 10 mm x 10 mm Si substrates

Silicon Nanowire Arrays

$0.00 – $495.00

Vertically aligned arrays of high aspect ratio high density Si nanowires on Si wafers are prepared using metal-assisted chemical etching of silicon (MACE).  These arrays could be made over large areas, with adjustable diameter, density, and length of the nanowires.  A thin layer of catalytic metal remaining at the base of the nanowires can be removed by selective etching.  Standard offerings currently include:

•   Pack of 3 of 1 cm x 1 cm pieces of Si wafer with nanowires on one face.
•   One nanowire diameter (200±50 nm), trending lower with increasing length.
•   Three nanowire lengths (0.5, 1, 3 and 5 µm) are in stock.
•   Longer nanowires (10 µm) are under development. Inquire for availability.

To purchase standard product, select the specifications from the menu below and click add to cart.  For other nanowire geometries and substrates, contact us with your requirements.

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SKU: SiNW-SIZE-DIA-LENGTH Category: Tag:

Description

Silicon nanowire arrays have been utilized in a variety of applications, including Li-ion batteries, solar cells, optical coatings, microfluidics, biosensing and photocatalysis. These materials are especially well-suited for applications that require large surface areas and could take advantage of the broader silicon know-how.
PARAMETER AVAILABLE RANGE** STANDARD PRODUCTS*
Process & Material visit Si Nanowires Technology page Si, without residual Ag catalyst
Nanowire diameter, nm 75 – 600 200 ± 50

(trending lower for longer wires)
Nanowire Length, µm 0.1 – 10 0.5,  1, 2, 3, 5 (±50%)
Fill Fraction, % 10 – 45 25 – 30
Substrate Size, mm up to 50 mm Si wafer 10 x 10
Substrate Type Si wafers, poly Si on different substrates prime grade Si <100> wafers, p-type, 1-10 Ohm-cm
*  Lead time for standard specifications is 2 – 3 days.  Due to limited inventory, some of the standard specifications may be temporarily out of stock. Lead time for out of stock and custom specifications s 3-6 weeks.
** For availability of Si nanowires with custom specifications, contact us with your requirements.
*** Volume discounts are available in quantities over 20 substrates.
Products are designed and fabricated by InRedox partner, Advanced Silicon Group, a global leader in silicon nanotexturing and its applications, pat.  http://www.advancedsilicongroup.com/patents.html.

Additional information

Dimensions 10 × 10 × 0.28 mm
Size & Qty

3 pcs of 1 cm x 1 cm, inquire for other sizes
Si NW diameter

200±50 nm
Si NW length

0.5 µm, 1.0 µm, 2.0 µm, 3.0 µm, 5.0 µm, 10 µm
AAO Films with ALD Coatings25 mm x 25 mm AAO nanotemplates with ALD coatingsTweezers for AAO Handling